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AM29BDS640GBD9WSI 参数 Datasheet PDF下载

AM29BDS640GBD9WSI图片预览
型号: AM29BDS640GBD9WSI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 65 页 / 845 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
Table 11. Burst Read Mode Settings  
Address Bits  
rising edges, barring any delays. The device can be set  
so that the falling clock edge is active for all synchro-  
nous accesses. Address bit A17 determines this set-  
ting; “1” for rising active, “0” for falling active.  
Burst Modes  
A16  
0
A15  
RDY Configuration  
Continuous  
0
1
0
1
By default, the device is set so that the RDY pin will  
output VOH whenever there is valid data on the outputs.  
The device can be set so that RDY goes active one  
data cycle before active data. Address bit A18 deter-  
mines this setting; “1” for RDY active with data, “0” for  
RDY active one clock cycle before valid data.  
8-word linear wrap around  
16-word linear wrap around  
32-word linear wrap around  
0
1
1
Note: Upon power-up or hardware reset the default setting  
is continuous.  
Configuration Register  
Burst Active Clock Edge Configuration  
Table 12 shows the address bits that determine the  
configuration register settings for various device func-  
tions.  
By default, the device will deliver data on the rising  
edge of the clock after the initial synchronous access  
time. Subsequent outputs will also be on the following  
Table 12. Burst Mode Configuration Register  
Settings (Binary)  
Address BIt  
Function  
0 = Synchronous Read (Burst Mode) Enabled  
1 = Asynchronous Mode (default)  
A19  
Set Device Read Mode  
0 = RDY active one clock cycle before data  
1 = RDY active with data (default)  
A18  
RDY  
0 = Burst starts and data is output on the falling edge of CLK  
1 = Burst starts and data is output on the rising edge of CLK (default)  
A17  
A16  
Clock  
00 = Continuous (default)  
01 = 8-word linear with wrap around  
10 = 16-word linear with wrap around  
11 = 32-word linear with wrap around  
Burst Read Mode  
A15  
A14  
A13  
000 = Data is valid on the 2nd active CLK edge after AVD# transition to VIH  
001 = Data is valid on the 3rd active CLK edge after AVD# transition to VIH  
010 = Data is valid on the 4th active CLK edge after AVD# transition to VIH  
011 = Data is valid on the 5th active CLK edge after AVD# transition to VIH  
100 = Data is valid on the 6th active CLK edge after AVD# transition to VIH  
101 = Data is valid on the 7th active CLK edge after AVD# transition to VIH (default)  
Programmable  
Wait State  
A12  
Note:Device will be in the default state upon power-up or hardware reset.  
Note that the last two outermost boot sectors can be  
locked by taking the WP# signal to VIL.  
Sector Lock/Unlock Command Sequence  
The sector lock/unlock command sequence allows the  
system to determine which sectors are protected from  
accidental writes. When the device is first powered up,  
all sectors are locked. To unlock a sector, the system  
must write the sector lock/unlock command sequence.  
Two cycles are first written: addresses are don’t care  
and data is 60h. During the third cycle, the sector  
address (SLA) and unlock command (60h) is written,  
while specifying with address A6 whether that sector  
should be locked (A6 = VIL) or unlocked (A6 = VIH).  
After the third cycle, the system can continue to lock or  
unlock additional cycles, or exit the sequence by  
writing F0h (reset command).  
Reset Command  
Writing the reset command resets the banks to the read  
or erase-suspend-read mode. Address bits are don’t  
cares for this command.  
The reset command may be written between the  
sequence cycles in an erase command sequence  
before erasing begins. This resets the bank to which  
the system was writing to the read mode. Once erasure  
begins, however, the device ignores reset commands  
until the operation is complete.  
24  
Am29BDS640G  
October 31, 2002