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AM29BDS640GBD9WSI 参数 Datasheet PDF下载

AM29BDS640GBD9WSI图片预览
型号: AM29BDS640GBD9WSI
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位(4M ×16位) CMOS 1.8伏只同步读/写,突发模式闪存 [64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 65 页 / 845 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
When the Embedded Erase algorithm is complete, that  
The system can monitor DQ3 to determine if the sector  
erase timer has timed out (See “DQ3: Sector Erase  
Timer” section on page 33.). The time-out begins from  
the rising edge of the final WE# pulse in the command  
sequence.  
bank returns to the read mode and addresses are no  
longer latched. The system can determine the status of  
the erase operation by using DQ7 or DQ6/DQ2. Refer  
to the “Write Operation Status” section for information  
on these status bits.  
When the Embedded Erase algorithm is complete, the  
bank returns to reading array data and addresses are  
no longer latched. Note that while the Embedded Erase  
operation is in progress, the system can read data from  
the non-erasing bank. The system can determine the  
status of the erase operation by reading DQ7 or  
DQ6/DQ2 in the erasing bank. Refer to the “Write  
Operation Status” section on page 30 section for infor-  
mation on these status bits.  
Any commands written during the chip erase operation  
are ignored. However, note that a hardware reset  
immediately terminates the erase operation. If that  
occurs, the chip erase command sequence should be  
reinitiated once that bank has returned to reading array  
data, to ensure data integrity.  
The host system may also initiate the chip erase  
command sequence while the device is in the unlock  
bypass mode. The command sequence is two cycles  
cycles in length instead of six cycles. See Table 14 for  
details on the unlock bypass command sequences.  
Once the sector erase operation has begun, only the  
Erase Suspend command is valid. All other commands  
are ignored. However, note that a hardware reset  
immediately terminates the erase operation. If that  
occurs, the sector erase command sequence should  
be reinitiated once that bank has returned to reading  
array data, to ensure data integrity.  
Figure 2 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase/Program Operations table in  
the AC Characteristics section for parameters and  
timing diagrams.  
The host system may also initiate the sector erase  
command sequence while the device is in the unlock  
bypass mode. The command sequence is four cycles  
cycles in length instead of six cycles.  
Sector Erase Command Sequence  
Sector erase is a six bus cycle operation. The sector  
erase command sequence is initiated by writing two  
unlock cycles, followed by a set-up command. Two  
additional unlock cycles are written, and are then fol-  
lowed by the address of the sector to be erased, and  
the sector erase command. Table 14 shows the  
address and data requirements for the sector erase  
command sequence.  
Figure 2 illustrates the algorithm for the erase opera-  
tion. Refer to the Erase/Program Operations table in  
the AC Characteristics section for parameters and  
timing diagrams.  
Erase Suspend/Erase Resume Commands  
The device does not require the system to preprogram  
prior to erase. The Embedded Erase algorithm auto-  
matically programs and verifies the entire memory for  
an all zero data pattern prior to electrical erase. The  
system is not required to provide any controls or  
timings during these operations.  
The Erase Suspend command, B0h, allows the system  
to interrupt a sector erase operation and then read data  
from, or program data to, any sector not selected for  
erasure. The bank address is required when writing  
this command. This command is valid only during the  
sector erase operation, including the minimum 50 µs  
time-out period during the sector erase command  
sequence. The Erase Suspend command is ignored if  
written during the chip erase operation or Embedded  
Program algorithm.  
After the command sequence is written, a sector erase  
time-out of no less than 35 µs occurs. During the  
time-out period, additional sector addresses and sector  
erase commands may be written. Loading the sector  
erase buffer may be done in any sequence, and the  
number of sectors may be from one sector to all sec-  
tors. The time between these additional cycles must be  
less than 50 µs, otherwise erasure may begin. Any  
sector erase address and command following the  
exceeded time-out may or may not be accepted. It is  
recommended that processor interrupts be disabled  
during this time to ensure all commands are accepted.  
The interrupts can be re-enabled after the last Sector  
Erase command is written. Any command other than  
Sector Erase or Erase Suspend during the time-out  
period resets that bank to the read mode. The system  
must rewrite the command sequence and any addi-  
tional addresses and commands.  
When the Erase Suspend command is written during  
the sector erase operation, the device requires a  
maximum of 35 µs to suspend the erase operation.  
However, when the Erase Suspend command is  
written during the sector erase time-out, the device  
immediately terminates the time-out period and sus-  
pends the erase operation.  
After the erase operation has been suspended, the  
bank enters the erase-suspend-read mode. The  
system can read data from or program data to any  
sector not selected for erasure. (The device “erase  
suspends” all sectors selected for erasure.) Reading at  
any address within erase-suspended sectors produces  
status information on DQ7–DQ0. The system can use  
October 31, 2002  
Am29BDS640G  
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