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AM29BDS320GTC9VMI 参数 Datasheet PDF下载

AM29BDS320GTC9VMI图片预览
型号: AM29BDS320GTC9VMI
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位(2M ×16位) , 1.8伏只同时读/写,突发模式闪存 [32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory]
分类和应用: 闪存
文件页数/大小: 74 页 / 1108 K
品牌: SPANSION [ SPANSION ]
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P r e l i m i n a r y  
START  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read DQ7–DQ0  
Addr = VA  
Yes  
DQ7 = Data?  
No  
PASS  
FAIL  
Notes:  
1. VA = Valid address for programming. During a sector erase operation, a valid  
address is any sector address within the sector being erased. During chip erase, a  
valid address is any non-protected sector address.  
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simulta-  
neously with DQ5.  
Figure 4. Data# Polling Algorithm  
RDY: Ready  
The RDY is a dedicated output that, by default, indicates (when at logic low) the  
system should wait 1 clock cycle before expecting the next word of data. Using  
the RDY Configuration Command Sequence, RDY can be set so that a logic low  
indicates the system should wait 2 clock cycles before expecting valid data.  
RDY functions only while reading data in burst mode. The following conditions  
cause the RDY output to be low: during the initial access (in burst mode), and  
after the boundary that occurs every 64 words beginning with the 64th address,  
3Fh.  
38  
Am29BDS320G  
27243B1 October 1, 2003