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AM29BDD160GT80CKF 参数 Datasheet PDF下载

AM29BDD160GT80CKF图片预览
型号: AM29BDD160GT80CKF
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 512KX32, 80ns, PQFP80, PLASTIC, QFP-80]
分类和应用: 内存集成电路
文件页数/大小: 76 页 / 1251 K
品牌: SPANSION [ SPANSION ]
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A D V A N C E I N F O R M A T I O N  
CE#  
CLK  
ADV#  
A0-  
A18  
Address 0  
Address 1  
Address 2  
Address 3  
D0  
D1  
D2  
D3  
D3  
DQ0  
-
DQ31  
OE#  
WE#  
VIH  
Float  
Float  
VOH  
IND/WAIT#  
Note: Operation is shown for the 32-bit data bus. For the 16-bit data bus, A-1 is required.  
Figure 1. Asynchronous Read Operation  
when burst mode is enabled. Read operations to  
these locations results in the data remaining valid  
while OE# is at VIL, regardless of the number of CLK  
cycles applied to the device.  
Synchronous (Burst) Read Operation  
The Am29BDD160 is capable of performing burst read  
operations to improve total system data throughput.  
The device is available in three burst modes of opera-  
tion: linear and continuous sequential burst mode. 2, 4  
and 8 double word (x32) and 4 and 8 word (x16) ac-  
cesses are configurable as either sequential burst ac-  
cesses. 16 and 32 word (x16) accesses are only  
configurable as linear burst accesses. Additional op-  
tions for all burst modes include initial access delay  
configurations (2–16 CLKs), data hold for either 1 or 2  
CLKs, and whether the data is presented on either the  
rising or falling edge of the CLK signal. Device config-  
uration for burst mode operation is accomplished by  
writing the Configuration Register with the desired  
burst configuration information. Once the Configura-  
tion Register is written to enable burst mode opera-  
tion, all subsequent reads from the array are returned  
using the burst mode protocols. Like the main memory  
access, the SecSi Sector memory is accessed with  
the same burst or asynchronous timing as defined in  
the Configuration Register. However, the user must  
recognize that continuous burst operations past the  
256 byte SecSi boundary returns invalid data.  
Linear Burst Read Operations  
Linear burst read mode reads either 4, 8, 16, or 32  
words (1 word = 16 bits), depending upon the Configu-  
ration Register option. If the device is configured with  
a 32 bit interface (WORD# = VIH), the burst access is  
comprised of 4 clocked reads for 8 words and 16  
clocked reads for 32 words (See Table 5 for all valid  
burst output sequences). The number of clocked  
reads is doubled when the device is configured in the  
16-bit data bus mode (WORD# = VIL). The IND/WAIT#  
pin transitions active (VIL) during the last transfer of  
data during a linear burst read before a wrap around,  
indicating that the system should initiate another  
ADV# to start the next burst access. If the system con-  
tinues to clock the device, the next access wraps  
around to the starting address of the previous burst  
access. The IND/WAIT# signal remains inactive (float-  
ing) when not active. See Table 5 for a complete 32  
and 16 bit data bus interface order. 16 and 32 word  
options are restricted to sequential burst accesses,  
only.  
Burst read operations occur only to the main flash  
memory arrays. The Configuration Register and pro-  
tection bits are treated as single cycle reads, even  
16  
Am29BDD160G  
April 8, 2003