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U632H64BS2K25G1 参数 Datasheet PDF下载

U632H64BS2K25G1图片预览
型号: U632H64BS2K25G1
PDF下载: 下载PDF文件 查看货源
内容描述: PowerStore 8K ×8的nvSRAM [PowerStore 8K x 8 nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 410 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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U632H64  
Nonvolatile Memory Operations  
Mode Selection  
A12 - A0  
(hex)  
E
W
HSB  
Mode  
I/O  
Power  
Notes  
H
L
L
L
X
H
L
H
H
H
H
X
X
X
Not Selected  
Read SRAM  
Write SRAM  
Output High Z  
Output Data  
Input Data  
Standby  
Active  
Active  
Active  
l
H
0000  
1555  
0AAA  
1FFF  
10F0  
0F0F  
Read SRAM  
Read SRAM  
Read SRAM  
Read SRAM  
Read SRAM  
Output Data  
Output Data  
Output Data  
Output Data  
Output Data  
Output High Z  
k, l  
k, l  
k, l  
k, l  
k, l  
k
Nonvolatile STORE  
L
H
H
0000  
1555  
0AAA  
1FFF  
10F0  
0F0E  
Read SRAM  
Read SRAM  
Read SRAM  
Read SRAM  
Read SRAM  
Nonvolatile  
RECALL  
Output Data  
Output Data  
Output Data  
Output Data  
Output Data  
Output High Z  
Active  
k, l  
k, l  
k, l  
k, l  
k, l  
k
X
X
L
X
STORE/Inhibit  
Output High Z  
I
CC2/Standby  
m
k: The six consecutive addresses must be in order listed (0000, 1555, 0AAA, 1FFF, 10F0, 0F0F) for a Store cycle or (0000, 1555, 0AAA, 1FFF,  
10F0, 0F0E) for a RECALL cycle. W must be high during all six consecutive cycles. See STORE cycle and RECALL cycle tables and dia-  
grams for further details.  
The following six-address sequence is used for testing purposes and should not be used: 0000, 1555, 0AAA, 1FFF, 10F0, 139C.  
l: I/O state assumes that G VIL. Activation of nonvolatile cycles does not depend on the state of G.  
m: HSB initiated STORE operation actually occurs only if a WRITE has been done since last STORE operation. After the STORE (if any)  
completes, the part will go into standby mode inhibiting all operation until HSB rises.  
Symbol  
PowerStore Power Up RECALL/  
No.  
Conditions  
Min.  
Max.  
Unit  
Hardware Controlled STORE  
Alt.  
IEC  
24 Power Up RECALL Durationn, e  
25 STORE Cycle Duration  
26 HSB Low to Inhibit One  
27 HSB High to Inhibit Offe  
28 External STORE Pulse Widthe  
HSB Output Low Currente, o  
HSB Output High Currente, o  
Low Voltage Trigger Level  
tRESTORE  
tHLQX  
650  
10  
μs  
ms  
μs  
ns  
ns  
mA  
μA  
V
>
td(H)S VCC 4.5 V  
tHLQZ  
tdis(H)S  
1
tHHQX  
ten(H)S  
700  
tHLHX  
tw(H)S  
250  
3
IHSBOL  
IHSBOH  
VSWITCH  
HSB = VOL  
HSB = VIL  
5
60  
4.0  
4.5  
n: tRESTORE starts from the time VCC rises above VSWITCH  
.
o: HSB is an I/O that has a week internal pullup; it is basically an open drain output. It is meant to allow up to 32 U632H64 to be ganged  
together for simultaneous storing. Do not use HSB to pullup any external circuitry other than other U632H64 HSB pins.  
August 15, 2006  
STK Control #ML0047  
7
Rev 1.1