U632H64
C-Type
K-Type
DC Characteristics
Symbol
Conditions
Unit
Min. Max. Min. Max.
VCC
IOH
IOL
= 4.5 V
=-4 mA
= 8 mA
Output High Voltage
Output Low Voltage
VOH
VOL
2.4
8
2.4
8
V
V
0.4
-4
0.4
-4
VCC
VOH
VOL
= 4.5 V
= 2.4 V
= 0.4 V
Output High Current
Output Low Current
IOH
IOL
mA
mA
Input Leakage Current
VCC
= 5.5 V
High
Low
IIH
IIL
VIH
VIL
= 5.5 V
1
1
μA
μA
=
0 V
-1
-1
-1
-1
Output Leakage Current
VCC
= 5.5 V
High at Three-State- Output
Low at Three-State- Output
IOHZ
IOLZ
VOH
VOL
= 5.5 V
1
1
μA
μA
=
0 V
SRAM Memory Operations
Symbol
Switching Characteristics
No.
Unit
Read Cycle
Alt.
IEC
Min. Max.
1
2
3
4
5
6
7
8
9
Read Cycle Timef
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
tELICCH
tEHICCL
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
25
25
25
12
13
13
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time to Data Validg
Chip Enable Access Time to Data Valid
Output Enable Access Time to Data Valid
E HIGH to Output in High-Zh
G HIGH to Output in High-Zh
E LOW to Output in Low-Z
G LOW to Output in Low-Z
0
Output Hold Time after Address Change
3
10 Chip Enable to Power Activee
tPU
0
11 Chip Disable to Power Standbyd, e
tPD
25
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both LOW.
g: Address valid prior to or coincident with E transition LOW.
h: Measured 200 mV from steady state output voltage.
Rev 1.1
August 15, 2006
STK Control #ML0047
4
SIMTEK [ SIMTEK CORPORATION ]
