Si3220/Si3225
Table 3. 3.3 V Power Supply Characteristics
1
(Continued)
(V
DD
, V
DD1
–V
DD4
=
3.3 V, T
A
=
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
Chipset Power
Consumption
Symbol
P
SLEEP
P
OPEN
P
STBY
P
STBY
P
ACTIVE3
P
ACTIVE3
P
OHT
P
OHT
P
RING
Test Condition
Sleep mode, RESET = 0,
V
BAT
= –70 V
Open (high-impedance), V
BAT
= –70 V
Active on-hook standby, V
BAT
= –48 V
Active on-hook standby, V
BAT
= –70 V
Forward/reverse active off-hook,
ABIAS = 4 mA, V
BAT
= –24 V
Forward/reverse active off-hook,
ABIAS = 4 mA, V
BAT
= –48 V
Forward/reverse OHT, OBIAS = 4 mA,
V
BAT
= –48 V
Forward/reverse OHT, OBIAS = 4 mA,
V
BAT
= –70 V
Ringing, V
RING
= 45 v
rms
,
V
BAT
= –70 V, 1 REN load
Min
—
—
—
—
—
—
—
—
—
Typ
8
65
70
80
240
345
550
735
516
Max
—
—
—
—
—
—
—
—
—
Unit
mW
mW
mW
mW
mW
mW
mW
mW
mW
Notes:
1.
All specifications are for a single channel based on measurements with both channels in the same operating state.
2.
See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3.
Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional V
BAT
x I
LOOP
term.
Rev. 1.0
7
SILICONIMAGE [ Silicon image ]
