Si1000/1/2/3/4/5
Table 4.21. Digital IO Specifications (nIRQ)
Parameter
Rise Time
Symbol
Conditions
Min
—
Typ
—
Max Units
T
T
0.1 x V to 0.9 x V , C = 5 pF
8
8
ns
ns
pF
V
RISE
FALL
DD
DD
L
Fall Time
0.9 x V to 0.1 x V
C = 5 pF
—
—
DD
DD,
L
Input Capacitance
C
V
—
—
1
IN
Logic High Level Input
Voltage
V
V
– 0.6
—
—
IH
DD
Logic Low Level Input
Voltage
V
—
0.6
V
IL
Input Current
I
0<V < V
–100
– 0.6
DD
—
—
100
—
nA
V
IN
IN
DD
Logic High Level
V
I
<1 mA source, V =1.8 V
OH
OH
DD
Output Voltage
Logic Low Level
V
I
<1 mA sink, V =1.8 V
—
—
0.6
V
OL
OL
DD
Output Voltage
Note: All specifications guaranteed by qualification. Qualification test conditions are listed in the "Production Test
Conditions" section on page 73.
Table 4.22. GPIO Specifications (GPIO_0, GPIO_1, and GPIO_2)
Parameter
Rise Time
Symbol
Conditions
0.1 x V to 0.9 x V ,
DD
Min
Typ
Max
Units
T
—
—
8
ns
RISE
DD
C = 10 pF, DRV<1:0>=HH
L
Fall Time
T
0.9 x V to 0.1 x V
—
—
—
8
1
ns
FALL
DD
DD,
C = 10 pF, DRV<1:0>=HH
L
Input Capacitance
C
V
—
—
pF
V
IN
Logic High Level Input
Voltage
V
– 0.6
DD
IH
Logic Low Level Input
Voltage
V
—
—
0.6
V
IL
Input Current
I
0<V < V
DD
–100
5
—
—
100
25
nA
µA
IN
IN
Input Current If Pullup is
Activated
I
V =0 V
INP
IL
Maximum Output Current
I
DRV<1:0>=LL
DRV<1:0>=LH
DRV<1:0>=HL
DRV<1:0>=HH
0.1
0.9
1.5
1.8
0.5
2.3
3.1
3.6
—
0.8
3.5
4.8
5.4
—
mA
mA
mA
mA
V
OmaxLL
OmaxLH
OmaxHL
OmaxHH
I
I
I
Logic High Level Output
Voltage
V
I
< I
source,
V
– 0.6
DD
OH
OH Omax
V
=1.8 V
DD
Logic Low Level Output
Voltage
V
I
< I sink,
—
—
0.6
V
OL
OL Omax
V
=1.8 V
DD
Note: All specifications guaranteed by qualification. Qualification test conditions are listed in the "Production Test
Conditions" section on page 73.
Rev. 1.0
71
SILICON [ SILICON ]
