C8051F360/1/2/3/4/5/6/7/8/9
Table 7.1. Voltage Reference Electrical Characteristics
V
= 3.0 V; –40 to +85 °C unless otherwise specified.
DD
Parameter
Conditions
Internal Reference (REFBE = 1)
25 °C ambient
Min
Typ
Max
Units
Output Voltage
2.35
—
2.42
—
2.50
10
V
VREF Short-Circuit Current
mA
VREF Temperature
Coefficient
—
25
—
ppm/°C
Load Regulation
Load = 0 to 200 µA to AGND
—
—
3
—
—
µV/µA
ms
4.7 µF tantalum, 0.1 µF ceramic
bypass
7.5
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
0.1 µF ceramic bypass
—
—
200
1.4
—
—
µs
mV/V
External Reference (REFBE = 0)
Input Voltage Range
Input Current
0
—
3
V
V
DD
Sample Rate = 200 ksps; VREF =
3.0 V
—
—
µA
Power Specifications
BIASE = ‘1’ or AD0EN = ‘1’ or
IOSCEN = ‘1’
—
—
100
30
150
50
µA
µA
ADC Bias Generator
REFBE = ‘1’ or TEMPE = ‘1’ or
IDA0EN = ‘1’
Reference Bias Generator
Rev. 1.0
69
SILICON [ SILICON ]
