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S-8261AANMD-G2N-T2 参数 Datasheet PDF下载

S-8261AANMD-G2N-T2图片预览
型号: S-8261AANMD-G2N-T2
PDF下载: 下载PDF文件 查看货源
内容描述: 电池保护IC ,电池组 [BATTERY PROTECTION IC FOR SINGLE-CELL PACK]
分类和应用: 电池光电二极管
文件页数/大小: 36 页 / 706 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK  
S-8261 Series  
Rev.1.9_00  
(6) Test Condition 6, Test Circuit 3  
〈〈 Internal Resistance between VM and VDD, Internal Resistance between VM and VSS 〉〉  
The resistance between VM and VDD (RVMD) is the internal resistance between VM and VDD under the set  
conditions of V1 = 1.8 V and V2 = 0 V.  
The resistance between VM and VSS (RVMS) is the internal resistance between VM and VDD under the set  
conditions of V1 = 3.5 V and V2 = 1.0 V.  
(7) Test Condition 7, Test Circuit 4  
〈〈 CO Pin Resistance “H”, CO Pin Resistance “L” 〉〉  
The CO pin resistance “H” (RCOH) is the resistance t the CO pin under the set condition of V1 = 3.5 V, V2 =  
0 V and V3 = 3.0 V.  
The CO pin resistance “L” (RCOL) is the resistance t the CO pin under the set condition of V1 = 4.5 V, V2 = 0 V  
and V3 = 0.5 V.  
(8) Test Condition 8, Test Circuit 4  
〈〈 DO Pin Resistance “H”, DO Pin Resistance “L” 〉〉  
The DO pin resistance “H” (RDOH) is the resistance t the DO pin under the set condition of V1 = 3.5 V, V2 =  
0 V and V4 = 3.0 V.  
The DO pin resistance “L” (RDOL) is the resistance t the DO pin under the set condition of V1 = 1.8 V, V2 = 0 V  
and V4 = 0.5 V.  
(9) Test Condition 9, Test Circuit 5  
〈〈 Overcharge Detection Delay Time, Overdischarge Detection Delay Time 〉〉  
The overcharge detection delay time (tCU) is the time needed for VCO to change from “H” to “L” just after the  
voltage V1 momentarily increases (within 10 µs) from the overcharge detection voltage (VCU) 0.2 V to the  
overcharge detection voltage (VCU) + 0.2 V under the set condition of V2 = 0 V.  
The overdischarge detection delay time (tDL) is the time needed for VDO to change from “H” to “L” just after the  
voltage V1 momentarily decreases (within 10 µs) from the overdischarge detection voltage (VDL) +0.2 V to the  
overdischarge detection voltage (VDL) 0.2 V under the set condition of V2 = 0 V.  
(10) Test Condition 10, Test Circuit 5  
〈〈 Overcurrent 1 Detection Delay Time, Overcurrent 2 Detection Delay Time, Load Short-circuiting  
Detection Delay Time, Abnormal Charge Current Detection Delay Time 〉〉  
The overcurrent 1 detection delay time (tIOV1) is the time needed for VDO to go “L” after the voltage V2  
momentarily increases (within 10 µs) from 0 V to 0.35 V under the set condition of V1 = 3.5 V and V2=0 V.  
The overcurrent 2 detection delay time (tIOV2) is the time needed for VDO to go “L” after the voltage V2  
momentarily increases (within 10 µs) from 0 V to 0.7 V under the set condition of V1 = 3.5 V and V2 = 0 V.  
The load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go “L” after the voltage V2  
momentarily increases (within 10 µs) from 0 V to 1.6 V under the set condition of V1 = 3.5 V and V2 = 0 V.  
The abnormal charge current detection delay time is the time needed for VCO to go from “H” to “L” after the  
voltage V2 momentarily decreases (within 10 µs) from 0 V to 1.1 V under the set condition of V1 = 3.5 V and  
V2 = 0 V. The abnormal charge current detection delay time has the same value as the overcharge detection  
delay time.  
(11) Test Condition 11, Test Circuit 2 (Product with 0 V battery charge function)  
〈〈 0 V Battery Charge Starting Charger Voltage 〉〉  
The 0 V battery charge starting charger voltage (V0CHA) is defined as the voltage between VDD and VM at  
which VCO goes “H” (VVM + 0.1 V or higher) when the voltage V2 is gradually decreased from the starting  
condition of V1 = V2 = 0 V.  
16  
Seiko Instruments Inc.  
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