欢迎访问ic37.com |
会员登录 免费注册
发布采购

S-8211CAX-I6T1G 参数 Datasheet PDF下载

S-8211CAX-I6T1G图片预览
型号: S-8211CAX-I6T1G
PDF下载: 下载PDF文件 查看货源
内容描述: 电池保护IC 1格包 [BATTERY PROTECTION IC FOR 1-CELL PACK]
分类和应用: 电池
文件页数/大小: 41 页 / 403 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
 浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第9页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第10页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第11页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第12页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第14页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第15页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第16页浏览型号S-8211CAX-I6T1G的Datasheet PDF文件第17页  
Rev.5.0
_00
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
(5) S-8211CAF, S-8211CAO, S-8211CAP, S-8211CAQ, S-8211CBD, S-8211CBO
Table 14
Item
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
DELAY TIME (Ta =
−40
to
+85
°C)
*1
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
t
CU
t
DL
t
DIOV
t
SHORT
t
CIOV
0.7
20
5
150
5
1.2
38
9
300
9
2.0
65
15
540
15
s
ms
ms
µs
ms
9
9
10
10
10
5
5
5
5
5
t
CU
t
DL
t
DIOV
t
SHORT
t
CIOV
0.96
30
7.2
240
7.2
1.2
38
9
300
9
1.4
46
11
360
11
s
ms
ms
µs
ms
9
9
10
10
10
5
5
5
5
5
Symbol
Condition
Min.
Typ.
Max.
Test
Test
Unit Condi-
Circuit
tion
*1.
Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
(6) S-8211CAW
Table 15
Test
Test
Unit Condi-
Circuit
tion
s
ms
ms
µs
ms
s
ms
ms
µs
ms
9
9
10
10
10
9
9
10
10
10
5
5
5
5
5
5
5
5
5
5
Item
DELAY TIME (Ta = 25 °C)
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
DELAY TIME (Ta =
−40
to
+85
°C)
Overcharge detection delay time
Overdischarge detection delay time
Discharge overcurrent detection delay time
Load short-circuiting detection delay time
Charge overcurrent detection delay time
*1
Symbol
Condition
Min.
Typ.
Max.
t
CU
t
DL
t
DIOV
t
SHORT
t
CIOV
t
CU
t
DL
t
DIOV
t
SHORT
t
CIOV
0.96
120
3.6
240
7.2
0.7
83
2.5
150
5
1.2
150
4.5
300
9
1.2
150
4.5
300
9
1.4
180
5.4
360
11
2.0
255
7.7
540
15
*1.
Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
Seiko Instruments Inc.
13