HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M
×
16 DRAM
Capacitance
T
A
= 0 to 70
°C,
f
= 1 MHz
Parameter
Input capacitance (A0 to A11)
Input capacitance (RAS, UCAS, LCAS, WE, OE)
I/O capacitance (I/O1 - I/O16)
Symbol
Limit Values
min.
max.
5
7
7
pF
pF
pF
–
–
–
Unit
C
I1
C
I2
C
IO
AC Characteristics
5, 6
T
A
= 0 to 70
°C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
min.
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for 1k-refresh version
Read Cycle
Access time from RAS
Access time from CAS
Access time from column address
OE access time
Limit Values
-50
max. min.
-60
max.
Unit Note
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
90
30
50
13
0
8
0
10
18
13
13
50
5
3
–
–
–
10k
10k
–
–
–
–
37
25
–
–
–
50
16
110
40
60
15
0
10
0
15
20
15
15
60
5
3
–
–
–
10k
10k
–
–
–
–
45
30
–
–
–
50
16
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
7
t
RAC
t
CAC
t
AA
t
OEA
7
–
–
–
–
50
13
25
13
–
–
–
–
60
15
30
15
ns
ns
ns
ns
8 ,9
8, 9
8, 10
Semiconductor Group
1998-10-01
SIEMENS [ Siemens Semiconductor Group ]
