HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M
×
16 DRAM
DC Characteristics
(cont’d)
T
A
= 0 to 70
°C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit
Values
min. max.
Common Parameters
Input leakage current
(0 V
≤
V
IH
≤
V
CC
+ 0.3 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
V
CC
+ 0.3 V)
Average
V
CC
supply current
-50 ns version
-60 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC MIN.
)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
Unit
Notes
I
I(L)
I
O(L)
I
CC1
– 10
– 10
10
10
µA
µA
1
1
–
–
130
115
2
130
115
mA
mA
mA
mA
mA
2, 3, 4
2, 3, 4
I
CC2
–
–
–
–
2, 4
2, 4
Average
V
CC
supply current, during RAS-only refresh
I
CC3
cycles
-50 ns version
-60 ns version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC MIN.
)
Average
V
CC
supply current, during fast page mode
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC MIN.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
I
CC4
–
–
40
30
1
mA
mA
mA
2, 3, 4
2, 3, 4
I
CC5
–
1
Average
V
CC
supply current, during CAS-before-RAS
I
CC6
refresh mode
-50 ns version
-60 ns version
(RAS, CAS cycling:
t
RC
=
t
RC MIN.
)
–
–
130
115
mA
mA
2, 4
2, 4
Semiconductor Group
6
1998-10-01
SIEMENS [ Siemens Semiconductor Group ]
