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HYB5118160BSJ-50 参数 Datasheet PDF下载

HYB5118160BSJ-50图片预览
型号: HYB5118160BSJ-50
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16位动态RAM 1K刷新 [1M x 16-Bit Dynamic RAM 1k Refresh]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 24 页 / 193 K
品牌: SIEMENS [ Siemens Semiconductor Group ]
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HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M
×
16 DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°C
Storage temperature range........................................................................................ – 55 to 150
°C
Input/output voltage (5 V versions) .................................................... – 0.5 to min (
V
CC
+ 0.5, 7.0) V
Input/output voltage (3.3 V versions) ................................................. – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................. 1.0 W
Power dissipation (3.3 V versions) .......................................................................................... 0.5 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under
“Absolute
Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
5 V Versions
Power supply voltage
Input high voltage
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
3.3 V Versions
Power supply voltage
Input high voltage
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
µA)
CMOS Output low voltage (
I
OUT
= 100
µA)
Symbol
Limit Values
min.
max.
5.5
0.8
0.4
3.6
0.8
0.4
0.2
Unit Test
Condition
V
CC
V
IH
V
IL
V
OH
V
OL
V
CC
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
4.5
2.4
– 0.5
2.4
3.0
2.0
– 0.5
2.4
V
1
1
1
1
V
CC
+ 0.5 V
V
V
V
V
V
CC
+ 0.5 V
V
V
V
V
V
1
1
1
1
V
CC
– 0.2 –
Semiconductor Group
5
1998-10-01