1M
×
16-Bit Dynamic RAM
1k Refresh
(Fast Page Mode)
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70
°C
operating temperature
• Fast Page Mode operation
• Performance:
-50
-60
60
15
30
104
40
ns
ns
ns
ns
ns
HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
50
13
25
84
35
• Power Dissipation, Refresh & Addressing:
HYB5118160
-50
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
715
11
5.5
-60
5 V
±
10 %
10/10
632
HYB3118160
-50
-60
3.3 V
±
0.3 V
10/10
468
7.2
3.6
414
mW
mW
mW
1024 cycles / 16 ms
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package:
P-SOJ-42-1
400 mil
Semiconductor Group
1
1998-10-01
SIEMENS [ Siemens Semiconductor Group ]
