LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
DC Characteristics (Continued)
V
= 3.3 V ± 0.3 V, T = 0°C to +70°C
A
CC
3/5» = Pin Set High for 3.3 V Operations
SYMBOL
PARAMETER
TYPE
MIN.
MAX.
UNITS
TEST CONDITIONS
VPP > VCC
NOTE
IPPR
VPP Read Current
200
µA
1
VPP = VPPH, Word/Byte
Write in Progress
IPPW
VPP Write Current
VPP Erase Current
40
20
60
40
mA
mA
µA
1
1
1
VPP = VPPH
,
IPPE
Block Erase in Progress
VPP Erase Suspend
Current
VPP = VPPH,
Block Erase Suspended
IPPES
200
VIL
VIH
Input Low Voltage
Input High Voltage
-0.3
2.0
0.8
V
V
VCC + 0.3
VCC = VCC MIN. and
IOL = 4 mA
VOL
Output Low Voltage
0.4
V
V
V
V
V
V
IOH = -2.0 mA
VCC = VCC MIN.
1
VOH
2.4
VCC - 0.2
0.0
Output High Voltage
IOH = -100 µA
VCC = VCC MIN.
2
VOH
VPP during Normal
Operations
VPPL
5.5
5.5
VPP during Write/Erase
Operations
VPPH
5.0
4.5
VCC Erase/Write
Lock Voltage
VLKO
2.0
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V = 3.3 V, V = 5.0 V, T = 25°C. These currents are valid for all
CC
PP
product versions (package and speeds).
2. I
I
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
CCES
CCES
and I
.
CCR
3. Automatic Power Saving (APS) reduces I
to less than 1 mA in Static operation.
CCR
4. CMOS inputs are either V ± 0.2 V or GND ± 0.2 V. TTL Inputs are either V or V .
CC
IL
IH
20
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
