8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
DC Characteristics
V
= 3.3 V ± 0.3 V, TA = 0°C to +70°C
CC
3/5» = Pin Set High for 3.3 V Operations
SYMBOL
PARAMETER
Input Load Current
Output Leakage Current
TYP.
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
IIL
±1
µA
µA
VCC = VCC MAX., VIN = VCC or GND
VCC = VCC MAX., VIN = VCC or GND
1
1
ILO
±10
VCC = VCC MAX.,
CE0» , CE»1, RP» = VCC ±0.2 V
BYTE, WP, 3/5» = VCC ±0.2 V or GND
4
8
µA
±0.2 V
ICCS
VCC Standby Current
1,4
VCC = VCC MAX.,
1
1
4
5
mA CE0» , CE»1, RP» = VIH
BYTE, WP, 3/5» = VIH or VIL
VCC Deep Power-Down
Current
ICCD
µA
1
RP» = GND ±0.2 V
VCC = VCC MAX.,
CMOS: CE»0, CE»1 = GND ±0.2 V
BYTE = GND ±0.2 V or VCC ±0.2 V
Inputs = GND ±0.2 V or VCC ±0.2 V
TTL: CE0» , CE»1 = VIL,
BYTE = VIL or VIH
Inputs = VIL or VIH
1
ICCR
VCC Read Current
30
35
mA
1, 3, 4
f = 8 MHz, IOUT = 0 mA
VCC = VCC MAX.,
CMOS: CE»0, CE»1 = GND ±0.2 V
BYTE = VCC ±0.2 V or GND ±0.2 V
Inputs = GND ±0.2 V or VCC ±0.2 V
TTL: CE0» , CE»1 = VIL,
BYTE = VIH or VIL
Inputs = VIL or VIH
2
ICCR
VCC Read Current
15
20
mA
1, 3, 4
f = 4 MHz, IOUT = 0 mA
ICCW
ICCE
VCC Write Current
8
6
12
12
mA
mA
Word/Byte Write in Progress
Block Erase in Progress
1
1
VCC Block Erase Current
VCC Erase Suspend
Current
CE»0, CE1» = VIH
Block Erase Suspended
ICCES
IPPS
3
6
±10
5
mA
µA
µA
1, 2
1
VPP Standby Current
±1
0.2
VPP ≤ VCC
VPP Deep Power-Down
Current
IPPD
1
RP» = GND ±0.2 V
19
SHARP [ SHARP ELECTRIONIC COMPONENTS ]
