GP1A52HRJ00F
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Parts
This product is assembled using the below parts.
[Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit]
• Photodetector (qty. : 1)
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Category
Response time (μs)
Photodiode
900
400 to 1 200
3
• Photo emitter (qty. : 1)
Maximum light emitting
Category
Material
I/O Frequency (MHz)
0.3
wavelength (nm)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs)
950
• Material
Case
Lead frame plating
Black NORYL resin
Solder dip. (Sn−3Ag−0.5Cu)
• Others
Laser generator is not used.
Sheet No.: D3-A03701EN
8