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STK433-130-E 参数 Datasheet PDF下载

STK433-130-E图片预览
型号: STK433-130-E
PDF下载: 下载PDF文件 查看货源
内容描述: 厚膜混合集成电路2声道AB类音频功率IC , 150W + 150W [Thick-Film Hybrid IC 2-channel class AB audio power IC, 150W+150W]
分类和应用: 商用集成电路放大器
文件页数/大小: 11 页 / 180 K
品牌: SANYO [ SANYO SEMICON DEVICE ]
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STK433-130-E  
Evaluation Board Characteristics  
THD - P  
Pd - P  
O
O
100  
220  
7
V
= 44V  
V
= 44V  
CC  
CC  
5
200  
180  
160  
140  
120  
100  
80  
Rg=600Ω  
2ch Drive  
(same output rating)  
f=1kHz  
VG=30dB  
VG=30dB  
Rg=600Ω  
Tc=25°C  
3
2
10  
7
5
R =6Ω  
L
3
2
2ch Drive  
1.0  
R =6Ω  
Ch1 measurement  
L
7
5
Tc=25°C  
3
2
f=2  
0kHz  
0.1  
7
5
3
60  
2
0.01  
f=1kHz  
40  
7
5
3
20  
0
2
0.001  
0.1  
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
1000  
2
3
5 7  
2
3
5 7  
10  
2
3
5 7  
100  
2
3
5 7  
1000  
1.0  
10  
100  
0.1  
1.0  
Output power, P /ch - W  
Output power, P /ch - W  
ITF02723  
ITF02724  
- fO  
O
P
O
P
O
- V  
CC  
220  
200  
180  
160  
140  
120  
100  
80  
220  
200  
180  
160  
140  
120  
100  
80  
R =6Ω  
L
2ch Drive  
Ch1 measurement  
VG=30dB  
Rg=600Ω  
THD=10%  
THD=0.4%  
f=1kHz  
Tc=25°C  
V
= 44V  
CC  
Rg=600Ω  
2ch Drive  
60  
60  
Ch1 measurement  
VG=30dB  
40  
40  
R =6Ω  
20  
0
20  
0
L
Tc=25°C  
2
3
5 7  
2
3
5 7  
2
3
5 7  
2
3
5 7  
100k  
10  
20  
30  
40  
50  
60  
70  
10  
100  
1k  
10k  
Supply voltage, V  
CC  
-
V
Frequency, f - Hz  
ITF02725  
ITF02726  
[Thermal Design Example for STK433-130-E (R = 6Ω)]  
L
The thermal resistance, θc-a, of the heat sink for total power dissipation, Pd, within the hybrid IC is determined as  
follows.  
Condition 1: The hybrid IC substrate temperature, Tc, must not exceed 125°C.  
Pd × θc-a + Ta < 125°C ................................................................................................. (1)  
Ta: Guaranteed ambient temperature for the end product  
Condition 2: The junction temperature, Tj, of each power transistor must not exceed 150°C.  
Pd × θc-a + Pd/N × θj-c + Ta < 150°C .......................................................................... (2)  
N: Number of power transistors  
θj-c: Thermal resistance per power transistor  
However, the power dissipation, Pd, for the power transistors shall be allocated equally among the number of power  
transistors.  
The following inequalities result from solving equations (1) and (2) for θc-a.  
θc-a < (125 Ta)/Pd ...................................................................................................... (1)'  
θc-a < (150 Ta)/Pd − θj-c/N ........................................................................................ (2)'  
Values that satisfy these two inequalities at the same time represent the required heat sink thermal resistance.  
When the following specifications have been stipulated, the required heat sink thermal resistance can be determined  
from formulas (1)' and (2)'.  
Supply voltage  
Load resistance  
Guaranteed ambient temperature  
V
R
Ta  
CC  
L
No. A1596-7/11  
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