K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 15). Its value can
be determined by the following guidance.
Rp
ibusy
VCC
1.8V device - VOL : 0.1V, VOH : VCCq-0.1V
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
open drain output
VOH
CL
VOL
Busy
tf
tr
GND
Device
Fig 15 Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
@ Vcc = 3.3V, Ta = 25°C , CL = 100pF
400
2.4
Ibusy
Ibusy
300n
3m
300n
3m
300
1.2
1.7
200n
100n
2m
1m
200n
100n
200
2m
1m
0.8
120
0.85
60
90
tr
tf
tr
30
100
0.6
0.57
1.7
0.43
3.6
2K
3.6
3.6
3.6
tf
1.7
1.7
2K
1.7
4K
1K
3K
Rp(ohm)
4K
1K
3K
Rp(ohm)
Rp value guidance
VCC(Max.) - VOL(Max.)
1.85V
Rp(min, 1.8V part) =
=
=
3mA + SIL
IOL + SIL
VCC(Max.) - VOL(Max.)
3.2V
Rp(min, 3.3V part) =
IOL + SIL
8mA + SIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
33
SAMSUNG [ SAMSUNG ]
