欢迎访问ic37.com |
会员登录 免费注册
发布采购

K9F5616Q0B-DIB0 参数 Datasheet PDF下载

K9F5616Q0B-DIB0图片预览
型号: K9F5616Q0B-DIB0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位, 16M x 16位NAND闪存 [32M x 8 Bit , 16M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 34 页 / 602 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第26页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第27页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第28页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第29页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第31页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第32页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第33页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第34页  
K9F5608U0B-VCB0,VIB0,FCB0,FIB0  
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5608U0B-YCB0,YIB0,PCB0,PIB0  
K9F5608U0B-DCB0,DIB0,HCB0,HIB0  
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5616U0B-YCB0,YIB0,PCB0,PIB0  
K9F5616U0B-DCB0,DIB0,HCB0,HIB0  
FLASH MEMORY  
PAGE PROGRAM  
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte/word or consecutive  
bytes/words up to 528(X8 device) or 264(X16 device), in a single page program cycle. The number of consecutive partial page program-  
ming operation within the same page without an intervening erase operation should not exceed 2 for main array and 3 for spare  
array. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in  
which up to 528 bytes(X8 device) or 264 words(X16 device) of data may be loaded into the page register, followed by a non-volatile pro-  
gramming period where the loaded data is programmed into the appropriate cell. About the pointer operation, please refer to the  
attached technical notes.  
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the three address cycles input  
and then serial data loading. The words other than those to be programmed do not need to be loaded.The Page Program confirm  
command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the  
programming process. The internal write controller automatically executes the algorithms and timings necessary for program and  
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command  
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle  
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command  
are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure  
10). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains  
in Read Status command mode until another valid command is written to the command register.  
Figure 10. Program Operation  
tPROG  
R/B  
I/Ox  
Pass  
80h  
Address & Data Input  
I/O0  
Fail  
10h  
70h  
COPY-BACK PROGRAM  
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the array to another page within  
the same array without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are  
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of  
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back is a sequential execu-  
tion of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation  
with "00h" command with the address of the source page moves the whole 528bytes/264words(X8 device:528bytes, X16  
device:264words) data into the internal buffer. As soon as the Flash returns to Ready state, copy-back programming command "8Ah"  
may be given with three address cycles of target page followed. The data stored in the internal buffer is then programmed directly  
into the memory cells of the destination page. Once the Copy-Back Program is finished, any additional partial page programming into  
the copied pages is prohibited before erase. Since the memory array is internally partitioned into two different planes, copy-back pro-  
gram is allowed only within the same memory plane. Thus, A14, the plane address, of source and destination page address must be  
the same. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status. But, if Copy-Back  
operations are accumulated over time, bit error due to charge loss is not checked by external error detection/correction  
scheme. For this reason, two bit error correction is recommended for the use of Copy-Back operation."  
Figure 11. Copy-Back Program Operation  
tR  
tPROG  
R/B  
I/Ox  
Add.(3Cycles)  
Pass  
Add.(3Cycles)  
00h  
I/O0  
Fail  
8Ah  
70h  
Source Address  
Destination Address  
30  
 复制成功!