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K9F5616Q0B-DIB0 参数 Datasheet PDF下载

K9F5616Q0B-DIB0图片预览
型号: K9F5616Q0B-DIB0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位, 16M x 16位NAND闪存 [32M x 8 Bit , 16M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 34 页 / 602 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第24页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第25页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第26页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第27页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第29页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第30页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第31页浏览型号K9F5616Q0B-DIB0的Datasheet PDF文件第32页  
K9F5608U0B-VCB0,VIB0,FCB0,FIB0  
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5608U0B-YCB0,YIB0,PCB0,PIB0  
K9F5608U0B-DCB0,DIB0,HCB0,HIB0  
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0  
K9F5616U0B-YCB0,YIB0,PCB0,PIB0  
K9F5616U0B-DCB0,DIB0,HCB0,HIB0  
FLASH MEMORY  
Figure 9. Read2 Operation  
CLE  
CE  
On K9F5608U0B_Y,P or K9F5608U0B_V,F  
CE must be held  
low during tR  
WE  
ALE  
R/B  
tR  
RE  
Start Add.(3Cycle)  
I/Ox  
50h  
Data Output(Sequential)  
Spare Field  
X8 device : A0 ~ A3 & A9 ~ A24  
X16 device : A0 ~ A2 & A9 ~ A24  
X8 device : A4 ~ A7 Don’t care  
X16 device : A3 ~ A7 are "L"  
Main array  
Data Field  
Spare Field  
Figure 8-1. Sequential Row Read1 Operation (only for K9F5608U0B-Y,P and K9F5608U0B-V,F Valid with in a block )  
tR  
tR  
tR  
R/B  
I/Ox  
Data Output  
1st  
Data Output  
Data Output  
00h  
01h  
Start Add.(3Cycle)  
A0 ~ A7 & A9 ~ A24  
2nd  
(528 Byte)  
Nth  
(528 Byte)  
(GND input=L, 00h Command)  
(GND input=L, 01h Command)  
(GND input=H, 00h Command)  
1st half array  
2nd half array  
1st half array  
2nd half array  
1st half array  
2nd half array  
1st  
1st  
1st  
2nd  
Nth  
Block  
2nd  
Nth  
2nd  
Nth  
Data Field  
Spare Field  
Data Field  
Spare Field  
Data Field  
Spare Field  
28  
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