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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
NAND Flash Technical Notes (Continued)  
Erase Flow Chart  
Read Flow Chart  
Start  
Start  
Write 60h  
Write 00h  
Write Block Address  
Write Address  
Read Data  
Write D0h  
Read Status Register  
ECC Generation  
No  
No  
I/O 6 = 1 ?  
or R/B = 1 ?  
Reclaim the Error  
Verify ECC  
Yes  
Yes  
*
No  
Page Read Completed  
Erase Error  
I/O 0 = 0 ?  
Yes  
Erase Completed  
: If erase operation results in an error, map out  
the failing block and replace it with another block.  
*
Block Replacement  
Block A  
1st  
2
{
(n-1)th  
nth  
an error occurs.  
(page)  
Buffer memory of the controller.  
Block B  
1st  
1
{
(n-1)th  
nth  
(page)  
* Step1  
When an error happens in the nth page of the Block ’A’ during erase or program operation.  
* Step2  
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)  
* Step3  
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.  
* Step4  
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.  
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