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K9F5608U0 参数 Datasheet PDF下载

K9F5608U0图片预览
型号: K9F5608U0
PDF下载: 下载PDF文件 查看货源
内容描述: 32M ×8位NAND闪存 [32M x 8 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 29 页 / 608 K
品牌: SAMSUNG [ SAMSUNG ]
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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
System Interface Using CE don’t-care.  
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal  
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for  
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-  
ing would provide significant savings in power consumption.  
Figure 3. Program Operation with CE don’t-care.  
CLE  
CE don’t-care  
CE  
WE  
ALE  
80h  
Start Add.(3Cycle)  
Data Input  
Data Input  
10h  
I/O0~7  
CE  
(Min. 10ns)  
tCS  
(Max. 45ns)  
tCEA  
tCH  
CE  
RE  
tREA  
tWP  
WE  
I/O0~7  
out  
Timing requirements : If CE is exerted high during sequential  
data-reading, the falling edge of CE to valid data(tCEA) must  
be kept greater than 45ns.  
Timing requirements : If CE is is exerted high during data-loading,  
tCS must be minimum 10ns and tWC must be increased accordingly.  
Figure 4. Read Operation with CE don’t-care.  
CLE  
CE don’t-care  
Must be held  
low during tR.  
CE  
RE  
ALE  
tR  
R/B  
WE  
Data Output(sequential)  
00h  
Start Add.(3Cycle)  
I/O0~7  
13  
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