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K9F2808Q0B-DCB0 参数 Datasheet PDF下载

K9F2808Q0B-DCB0图片预览
型号: K9F2808Q0B-DCB0
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×8位NAND闪存 [16M x 8 Bit NAND Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 29 页 / 305 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第21页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第22页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第23页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第24页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第26页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第27页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第28页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第29页  
K9F2808U0B-YCB0,YIB0  
K9F2808Q0B-DCB0,DIB0  
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0  
FLASH MEMORY  
Figure 8-1. Sequential Row Read2 Operation (GND Input=Fixed Low)  
(only for K9F2808U0B-Y and K9F2808U0B-V, valid within a block)  
tR  
tR  
tR  
R/B  
Start Add.(3Cycle)  
Data Output  
1st  
Data Output  
I/O0~7  
50h  
Data Output  
2nd  
(16Byte)  
Nth  
(16Byte)  
A0 ~ A3 & A9 ~ A24  
(A4 ~ A7 :  
Don¢t Care)  
1st  
Block  
Nth  
Data Field  
Spare Field  
PAGE PROGRAM  
The device is programmed basically on a page basis, but it allows multiple partial page program of one byte or consecutive bytes up  
to 528, in a single page program cycle. The number of consecutive partial page program operation within the same page without  
intervening erase operation should not exceed 2 for main array and 3 for spare array. The addressing may be done in any random  
order in a block. Page program cycle consists of a serial data loading(up to 528 bytes of data) into the page register, and prog ram of  
loaded data into the appropriate cell. Serial data loading can start in 2nd half array by moving pointer. About the pointer operation,  
please refer to the attached technical notes. Serial data loading is executed by entering the Serial Data Input command(80h) and  
three cycle address input and then serial data loading. The bytes except those to be programmed need not to be loaded. The Page  
Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering 80h will not initiate  
program process. The internal write controller automatically executes the algorithms and timings necessary for program and verifica-  
tion, thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered,  
with RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B out-  
put, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming  
is in progress. When the Page Program is completed, the Write Status Bit(I/O 0) may be checked(Figure 9). The internal write verifi-  
cation detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status com-  
mand mode until another valid command is written to the command register.  
Figure 9 details the sequence.  
Figure 9. Program & Read Status Operation  
tPROG  
R/B  
Pass  
I/O0~7  
80h  
Address & Data Input  
I/O0  
Fail  
10h  
70h  
A0 ~ A7 & A9 ~ A23  
528 Byte Data  
25  
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