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K9F2808Q0B-DCB0 参数 Datasheet PDF下载

K9F2808Q0B-DCB0图片预览
型号: K9F2808Q0B-DCB0
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×8位NAND闪存 [16M x 8 Bit NAND Flash Memory]
分类和应用: 闪存内存集成电路
文件页数/大小: 29 页 / 305 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第20页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第21页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第22页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第23页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第25页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第26页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第27页浏览型号K9F2808Q0B-DCB0的Datasheet PDF文件第28页  
K9F2808U0B-YCB0,YIB0  
K9F2808Q0B-DCB0,DIB0  
K9F2808U0B-VCB0,VIB0 K9F2808U0B-DCB0,DIB0  
FLASH MEMORY  
Figure 8. Read2 Operation  
CLE  
On K9F2808U0B_Y or K9F2808U0B_V  
CE must be held  
low during tR  
CE  
WE  
ALE  
tR  
R/B  
RE  
50h  
Data Output(Sequential)  
Spare Field  
Start Add.(3Cycle)  
A0 ~ A3 & A9 ~ A23  
I/O0~7  
(A4 ~ A7 :  
Don¢t Care)  
1st half array  
2nd half array  
Data Field  
Spare Field  
Figure 7-1. Sequential Row Read1 Operation(only for K9F2808U0B-Y and K9F2808U0B-V, valid within a block)  
tR  
tR  
tR  
R/B  
Data Output  
1st  
Data Output  
Data Output  
I/O0 ~ 7  
00h  
01h  
Start Add.(3Cycle)  
A0 ~ A7 & A9 ~ A24  
2nd  
(528 Byte)  
Nth  
(528 Byte)  
(GND input=L, 00h Command)  
(GND input=L, 01h Command)  
(GND input=H, 00h Command)  
1st half array  
2nd half array  
1st half array  
2nd half array  
1st half array  
2nd half array  
1st  
1st  
2nd  
Nth  
1st  
2nd  
Nth  
2nd  
Nth  
Block  
Data Field  
Spare Field  
Data Field  
Spare Field  
Data Field  
Spare Field  
24  
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