K6T0808C1D Family
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
Vcc
Min
4.5
0
Typ
Max
Unit
V
Supply voltage
Ground
5.0
5.5
Vss
0
-
0
V
Vcc+0.5V2)
0.8
Input high voltage
Input low voltage
VIH
2.2
-0.53)
V
VIL
-
V
Note:
1. Commercial Product : TA=0 to 70°C, otherwise specified
Industrial Product : TA=-40 to 85°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width£30ns
3. Undershoot : -3.0V in case of pulse width£30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE1) (f=1MHz, TA=25°C)
Item
Input capacitance
Symbol
CIN
Test Condition
VIN=0V
Min
Max
8
Unit
-
-
pF
pF
Input/Output capacitance
CIO
VIO=0V
10
1. Capacitance is sampled not, 100% tested
DC AND OPERATING CHARACTERISTICS
Item
Symbol
ILI
Test Conditions
Min Typ Max Unit
Input leakage current
VIN=Vss to Vcc
-1
-1
-
-
-
1
1
mA
mA
Output leakage current
Operating power supply current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc
IIO=0mA, CS=VIL, VIN=VIH or VIL, Read
ICC
5
2
-
10
5
mA
Read
Write
-
Cycle time=1ms, 100% duty, IIO=0mA
CS£0.2V, VIN£0.2V, VIN³ Vcc -0.2V
ICC1
mA
Average operating current
20
60
0.4
-
ICC2
VOL
VOH
ISB
Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
45
-
mA
V
Output low voltage
Output high voltage
Standby Current(TTL)
IOL=2.1mA
-
IOH=-1.0mA
2.4
-
V
CS=VIH, Other inputs=VIH or VIL
-
-
-
-
1
mA
mA
mA
Low Power
1
0.2
30
5
Standby Current (CMOS)
ISB1
CS³ Vcc-0.2V, Other inputs=0~Vcc
Low Low Power
Revision 1.0
November 1997
SAMSUNG [ SAMSUNG ]
