K6T0808C1D Family
CMOS SRAM
Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No History
Draft Data
Remark
0.0
0.1
Initial draft
May 18, 1997
Design target
First revision
April 1, 1997
Preliminily
- KM62256DL/DLI ISB1 = 100 ® 50mA
KM62256DL-L ISB1 = 20 ® 10mA
KM62256DLI-L ISB1 = 50 ® 15mA
- CIN = 6 ® 8pF, CIO = 8 ® 10pF
- KM62256D-4/5/7 Family
tOH = 5 ® 10ns
- KM62256DL/DLI IDR = 50® 30mA
KM62256DL-L/DLI-L IDR = 30 ® 15mA
1.0
Finalize
November 11, 1997
Final
- Remove ICC write value
- Improved operating current
ICC2 = 70 ® 60mA
- Improved standby current
KM62256DL/DLI ISB1 = 50 ® 30mA
KM62256DL-L ISB1 = 10 ® 5mA
KM62256DLI-L ISB1 = 15 ® 5mA
- Improved data retention current
KM62256DL/DLI IDR = 30 ® 5mA
KM62256DL-L/DLI-L IDR = 15 ® 3mA
- Remove 45ns part from commercial product and 100ns part
from industrial product.
Replace test load 100pF to 50pF for 55ns part
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision 1.0
November 1997
SAMSUNG [ SAMSUNG ]
