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K6T0808C1D-DL70 参数 Datasheet PDF下载

K6T0808C1D-DL70图片预览
型号: K6T0808C1D-DL70
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8位低功耗CMOS静态RAM [32Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 172 K
品牌: SAMSUNG [ SAMSUNG ]
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K6T0808C1D Family  
CMOS SRAM  
32Kx8 bit Low Power CMOS Static RAM  
FEATURES  
GENERAL DESCRIPTION  
· Process Technology : TFT  
The K6T0808C1D families are fabricated by SAMSUNG¢s  
advanced CMOS process technology. The families support  
various operating temperature ranges and have various  
package types for user flexibility of system design. The fami-  
lies also support low data retention voltage for battery back-  
up operation with low data retention current.  
· Organization : 32Kx8  
· Power Supply Voltage : 4.5~5.5V  
· Low Data Retention Voltage : 2V(Min)  
· Three state output and TTL Compatible  
· Package Type : 28-DIP-600B, 28-SOP-450  
28-TSOP1-0813.4 F/R  
PRODUCT FAMILY  
Power Dissipation  
Product Family  
Operating Temperature  
VCC Range  
Speed  
PKG Type  
Standby  
(ISB1, Max)  
Operating  
(Icc2, Max)  
K6T0808C1D-L  
K6T0808C1D-B  
K6T0808C1D-P  
K6T0808C1D-F  
30mA  
5mA  
28-DIP,28-SOP  
28-TSOP1-F/R  
551)/70ns  
70ns  
Commercial (0~70°C)  
Industrial (-40~85°C)  
4.5 to 5.5V  
60mA  
30mA  
5mA  
28-SOP  
28-TSOP1-F/R  
1. The parameter is tested with 50pF test load.  
PIN DESCRIPTION  
FUNCTIONAL BLOCK DIAGRAM  
1
28  
27  
26  
25  
24  
23  
22  
21  
A10  
CS  
OE  
A11  
A9  
Clk gen.  
Precharge circuit.  
2
3
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
VSS  
I/O3  
I/O2  
I/O1  
A0  
4
A8  
A13  
A8  
A14  
A12  
A7  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VCC  
WE  
A13  
A8  
5
A13  
WE  
VCC  
A14  
A12  
A7  
6
2
28-TSOP  
Type1 - Forward  
7
A12  
8
3
Memory array  
256 rows  
128´ 8 columns  
20  
19  
18  
17  
16  
15  
9
Row  
select  
A14  
A4  
4
A6  
10  
11  
12  
13  
14  
A6  
5
A9  
A5  
A5  
A5  
A6  
A7  
A1  
A4  
6
A11  
OE  
A4  
A2  
A3  
28-DIP  
7
A3  
28-SOP  
8
14  
13  
12  
11  
10  
9
A3  
A4  
A10  
CS  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
A2  
A2  
A1  
9
A1  
I/O Circuit  
A5  
Data  
cont  
I/O1  
I/O8  
A0  
A6  
I/O1  
I/O2  
I/O3  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
I/O8  
CS  
Column select  
10  
11  
12  
13  
14  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
A0  
A7  
A12  
A14  
VCC  
WE  
A13  
A8  
I/O1  
I/O2  
I/O3  
VSS  
8
28-TSOP  
Type1 - Reverse  
Data  
cont  
7
6
5
4
A10 A3 A0 A1 A2 A9 A11  
A9  
3
A11  
2
1
A10  
OE  
CS  
Pin Name  
CS  
Function  
Chip Select Input  
Output Enable Input  
Write Enable Input  
Address Inputs  
Pin Name  
I/O1~I/O8  
Vcc  
Function  
Control  
Logic  
WE  
OE  
Data Inputs/Outputs  
Power  
OE  
WE  
Vss  
Ground  
A0~A14  
NC  
No connect  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.  
Revision 1.0  
November 1997