欢迎访问ic37.com |
会员登录 免费注册
发布采购

K4H560838E-GLA2 参数 Datasheet PDF下载

K4H560838E-GLA2图片预览
型号: K4H560838E-GLA2
PDF下载: 下载PDF文件 查看货源
内容描述: 256Mb的E-死DDR SDRAM规格60Ball FBGA ( X4 / X8 ) [256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 244 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K4H560838E-GLA2的Datasheet PDF文件第10页浏览型号K4H560838E-GLA2的Datasheet PDF文件第11页浏览型号K4H560838E-GLA2的Datasheet PDF文件第12页浏览型号K4H560838E-GLA2的Datasheet PDF文件第13页浏览型号K4H560838E-GLA2的Datasheet PDF文件第15页浏览型号K4H560838E-GLA2的Datasheet PDF文件第16页浏览型号K4H560838E-GLA2的Datasheet PDF文件第17页浏览型号K4H560838E-GLA2的Datasheet PDF文件第18页  
DDR SDRAM 256Mb E-die (x4, x8)  
DDR SDRAM  
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins  
Specification  
Parameter  
DDR333  
DDR200/266  
1.2 V  
Maximum peak amplitude allowed for overshoot  
1.2 V  
1.2 V  
Maximum peak amplitude allowed for undershoot  
1.2 V  
The area between the overshoot signal and VDD must be less than or equal to  
The area between the undershoot signal and GND must be less than or equal to  
2.4 V-ns  
2.4 V-ns  
2.4 V-ns  
2.4 V-ns  
VDDQ  
Overshoot  
5
Maximum Amplitude = 1.2V  
4
3
2
Area = 2.4V-ns  
1
0
-1  
-2  
Maximum Amplitude = 1.2V  
GND  
-3  
-4  
-5  
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0  
Tims(ns)  
undershoot  
DQ/DM/DQS AC overshoot/Undershoot Definition  
Rev. 1.3 April, 2005  
 复制成功!