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K4H560438E-GCCC 参数 Datasheet PDF下载

K4H560438E-GCCC图片预览
型号: K4H560438E-GCCC
PDF下载: 下载PDF文件 查看货源
内容描述: 256Mb的E-死DDR 400 SDRAM内存规格60Ball FBGA ( X4 / X8 ) [256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)]
分类和应用: 内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 18 页 / 199 K
品牌: SAMSUNG [ SAMSUNG ]
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DDR SDRAM 256Mb E-die (x4, x8)  
DDR SDRAM  
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins  
Specification  
DDR400  
1.2V  
Parameter  
Maximum peak amplitude allowed for overshoot  
Maximum peak amplitude allowed for undershoot  
1.2V  
The area between the overshoot signal and VDD must be less than or equal to  
The area between the undershoot signal and GND must be less than or equal to  
2.5V-ns  
2.5V-ns  
VDDQ  
Overshoot  
5
Maximum Amplitude = 1.2V  
4
3
2
Area = 2.4V-ns  
1
0
-1  
-2  
Maximum Amplitude = 1.2V  
GND  
-3  
-4  
-5  
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0  
Tims(ns)  
undershoot  
DQ/DM/DQS AC overshoot/Undershoot Definition  
Rev. 1.1 September. 2003  
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