STU411D
Ver 1.0
84
70
56
42
28
20.0
10.0
ID=15A
125 C
5.0
125 C
75 C
25 C
75 C
25 C
14
1.0
0
0
2
4
6
8
10
1.6
2.0
0
0.4
0.8
1.2
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
10
VDS=20V
1000
800
8
ID=15A
Ciss
6
4
600
400
Coss
Crss
2
0
200
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12
14 16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
10
100
10
t
i
1
m
0
i
u
L
s
)
1
N
0
0
O
u
(
s
R DS
TD(off)
1
m
s
1
0
m
s
D
C
Tr
Tf
TD(on)
1
VG S =10V
S ingle P ulse
Tc=25 C
VDS=20V,ID=1A
VGS=10V
1
0.1
1
3
10
60 100
0.1
1
10
100
Rg, Gate Resistance(Ω)
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,04,2008
www.samhop.com.tw
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
