STU411D
Ver 1.0
N-Channel
40
20
16
V
V
GS =10V
GS =4.5V
V
GS =4V
32
24
16
V
V
GS =3.5V
Tj=125 C
25
12
-55 C
8
4
0
GS =3V
8
0
V
GS =2.5V
2
0
0.8
1.6
2.4
3.2
4.0
4.8
0
0.5
1
1.5
2.5
3
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
72
60
1.5
1.4
VGS =4.5V
ID=13A
48
36
1.3
VGS =4.5V
VGS =10V
1.2
24
12
VGS =10V
ID=15A
1.1
1.0
0.0
0
1
8
16
24
32
40
150
0
125
25
50
75
100
°
Tj( C )
°
Tj, Junction Temperature( C )
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.2
1.15
ID=250uA
VDS =VG S
ID=250uA
1.1
1.0
1.10
1.05
1.00
0.95
0.90
0.9
0.8
0.7
0.6
0.5
0.85
0
-50
25 50
-50 -25
0
25 50
75 100 125 150
-25
125 150
75 100
°
Tj, Junction Temperature( C )
°
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,04,2008
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4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
