STU411D
Ver 1.0
120
20.0
10.0
ID=-12A
100
80
25 C
125 C
60
40
75 C
125 C
75 C
25 C
20
1.0
0
0
2
4
6
8
10
0.4
0.6
0.8
1.0
1.2
1.4
-VGS, Gate-to-Source Voltage(V)
-VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
1200
10
Ciss
VDS=-20V
8
1000
800
ID=-12A
6
600
400
4
Coss
2
0
200
Crss
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12
14 16
-VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
10
100
10
t
i
m
i
1
L
0
)
0
u
N
s
TD(off)
O
(
R DS
1
m
s
1
0
TD(on)
m
Tr
s
D
C
Tf
1
VG S =-10V
S ingle P ulse
Tc=25 C
VDS=-20V,ID=-1A
VGS=-10V
1
1
0.1
6
10
60 100
0.1
1
10
100
Rg, Gate Resistance(Ω)
-VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Sep,04,2008
www.samhop.com.tw
8
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
