STU411D
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
4
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
Min
40
Typ
Max
Units
V
uA
uA
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
GS
= ±20V , V
DS
=0V
1
±10
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=15A
V
GS
=4.5V , I
D
=13A
V
DS
=5V , I
D
=15A
1.25
1.5
25
32
17
3
32
42
V
m ohm
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
Turn-Off Delay Time
tf
Fall Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=20V,V
GS
=0V
f=1.0MHz
623
95
56
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
2.2
V
DD
=20V
I
D
=1A
V
GS
=10V
R
GEN
=3.3 ohm
V
DS
=20V,I
D
=15A,V
GS
=10V
V
DS
=20V,I
D
=15A,V
GS
=4.5V
V
DS
=20V,I
D
=15A,
V
GS
=10V
10.5
10.6
39
9.6
9.5
4.5
1.6
2.3
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
I
S
V
SD
Diode Forward Voltage
b
A
V
V
GS
=0V,I
S
=2.2A
0.78
1.2
Sep,04,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
