STU411D
Ver 1.0
P-Channel
20
15
12
9
VGS=-10V
VGS=-4.5V
16
12
VGS=-3.5V
Tj=125 C
-55 C
25 C
6
3
0
8
4
0
VGS=-8V
VGS=-3V
2.5
0
0.5
1
1.5
2
3
0
0.8
1.6
2.4
3.2
4.0
4.8
-VDS, Drain-to-Source Voltage(V)
-VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
1.5
100
80
1.4
1.3
1.2
1.1
1.0
0.0
VGS=-10V
ID=-12A
VGS=-4.5V
VGS=-10V
60
40
VGS=-4.5V
ID=-10A
20
0
1
4
8
12
16
20
0
25
50
75
100
125
°
150
°
Tj( C )
-ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.15
1.3
ID=-250uA
VDS=VGS
1.2
1.10
1.05
1.00
ID=-250uA
1.1
1.0
0.9
0.8
0.95
0.90
0.85
0.7
0.6
75 100
-50 -25
0
25 50
125 150
-50 -25
0
25 50
75 100 125 150
°
Tj, Junction Temperature( C )
°
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Sep,04,2008
www.samhop.com.tw
7
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
