S TS 3621
=
P-Channel ELECTR ICAL CHAR ACTER ISTICS (TA 25 C unless otherwise noted)
Typ C Max
Parameter
Condition
Min
Unit
S ymbol
OFF CHAR ACTE R IS TICS
VGS 0V, ID -250uA
Drain-S ource Breakdown Voltage
=
-30
V
BVDS S
IDS S
=
-1
uA
nA
VDS -24V, VGS 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
=
=
VGS
20V, VDS 0V
=
IGS S
100
=
b
ON CHAR ACTE R IS TICS
-3
-1.8
75
VGS (th)
-1
8
V
Gate Threshold Voltage
VDS =VGS , ID = -250uA
90
m-ohm
m-ohm
=
=
VGS -10V, ID -2A
VGS = -4.5V, ID =-1A
VDS = -5V, VGS = -10V
Drain-S ource On-S tate R esistance
R DS (ON)
120
135
On-S tate Drain Current
ID(ON)
gFS
A
S
5.5
Forward Transconductance
=
=
VDS -5V, ID - 3A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
360
84
PF
PF
PF
CIS S
COS S
CR S S
VDS =-15V, VGS = 0V
f =1.0MHZ
Output Capacitance
52
R everse Transfer Capacitance
S WITCHING CHAR ACTE R IS TICS c
ns
ns
ns
ns
6
Turn-On Delay Time
tD(ON)
VDD = -15V,
ID = -1A,
VGE N = - 10V,
R GE N = 6 ohm
9.5
48
25
R ise Time
tr
tD(OFF)
tf
Turn-Off Delay Time
Fall Time
VDS =-15V,ID=-2A,VGS =-10V
VDS =-15V,ID=-2A,VGS =-4.5V
nC
nC
nC
nC
7
Qg
Total Gate Charge
3.4
0.9
2.2
Qgs
Qgd
Gate-S ource Charge
Gate-Drain Charge
VDS =-15V, ID = -2A
VGS =-10V
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
