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STS3621 参数 Datasheet PDF下载

STS3621图片预览
型号: STS3621
PDF下载: 下载PDF文件 查看货源
内容描述: 双ê nhancement模式F屈服Ë ffect晶体管( N和P沟道) [Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 195 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S TS 3621  
=
N-Channel ELECTR ICAL CHAR ACTER ISTICS (TA 25 C unless otherwise noted)  
Typ C Max  
Parameter  
Condition  
Min  
Unit  
S ymbol  
OFF CHAR ACTE R IS TICS  
5
VGS 0V, ID 250uA  
Drain-S ource Breakdown Voltage  
=
30  
V
BVDS S  
IDS S  
=
uA  
nA  
VDS 24V, VGS 0V  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
1
=
=
VGS  
20V, VDS 0V  
=
IGS S  
100  
=
b
ON CHAR ACTE R IS TICS  
1.7  
40  
52  
VGS (th)  
1
3
V
Gate Threshold Voltage  
VDS =VGS , ID = 250uA  
m-ohm  
50  
65  
=
=
VGS 10V, ID 3A  
Drain-S ource On-S tate R esistance  
R DS (ON)  
m-ohm  
=
VGS = 4.5V, ID 2A  
10  
VDS = 5V, VGS = 4.5V  
On-S tate Drain Current  
ID(ON)  
gFS  
A
S
5V, ID =3A  
=
9
Forward Transconductance  
VDS  
DYNAMIC CHAR ACTE R IS TICS c  
Input Capacitance  
330  
70  
PF  
PF  
PF  
CIS S  
COS S  
CR S S  
VDS =15V, VGS = 0V  
f =1.0MHZ  
Output Capacitance  
R everse Transfer Capacitance  
45  
S WITCHING CHAR ACTE R IS TICS c  
tD(ON)  
9
9
Turn-On Delay Time  
ns  
ns  
ns  
ns  
nC  
VDD = 15V,  
ID = 1A,  
R ise Time  
tr  
VGS = 10V,  
R GE N = 6 ohm  
tD(OFF)  
Turn-Off Delay Time  
Fall Time  
15  
10  
tf  
VDS =15V, ID =3A,VGS =10V  
VDS =15V, ID =3A,VGS =4.5V  
6
3
Qg  
Total Gate Charge  
nC  
nC  
nC  
Gate-S ource Charge  
Gate-Drain Charge  
Qgs  
Qgd  
1
VDS =15V, ID = 3A  
VGS =10V  
1.5  
2
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