S T S 3621
S amHop Microelectronics C orp.
Oct.
24 2006
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y
(N-C hannel)
V
DS S
30V
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-30V
I
D
3A
R
DS (ON) ( m
Ω
)
Max
I
D
-2A
R
DS (ON) ( m
Ω
)
Max
50 @ V
G S
= 10V
65 @ V
G S
= 4.5V
D1
90 @ V
G S
= -10V
135 @ V
G S
= -4.5V
D2
S OT 26
Top View
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G1
S1
N-ch
G2
S2
P -ch
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
a
S ymbol
V
DS
V
GS
25 C
70 C
I
DM
I
S
P
D
Ta=70 C
T
J
, T
S TG
I
D
N-C hannel P-C hannel
30
20
3
2.7
12
1.25
1.25
0.8
-55 to 150
-30
20
-2
1.8
-8
-1.25
Unit
V
V
A
A
A
A
W
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
a
Ta= 25 C
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
1
100
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
