S TS 3621
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
A
Typ C Max
Parameter
Condition
Min
Unit
V
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS b
0.81
1. 2
N-Ch
P-Ch
V
V
GS = 0V, Is =1.25A
GS = 0V, Is =-1.25A
Diode Forward Voltage
VSD
-0.8
-1.2
Notes
a.S urface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
20
20
16
V
GS =5V
25 C
VGS =10V
V
GS =4.5V
16
12
-55 C
Tj=125 C
VGS =4V
12
8
VGS =3.5V
8
4
4
0
VGS =3V
2
0
0
0.9
1.8
2.7
3.6
4.5
5.4
0
0.5
1
3
1.5
2.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
90
1.5
1.4
1.3
1.2
1.1
1.0
0.9
75
60
VGS =10V
ID=3A
VGS =4.5V
VGS =10V
45
30
VGS =4.5V
ID=2A
15
1
1
4
8
12
16
20
-25
0
150
100 125
25
50
75
Tj( C)
ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
