S TM9930A
1.4
1.15
1.10
1.05
V
DS =V G S
ID=250uA
1.2
I
D=250uA
1.0
0.8
0.6
1.00
0.95
0.90
0.85
0.4
0.2
6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hreshold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
100
20.0
10.0
ID=5A
80
60
125 C
75 C
40
25 C
25 C
125 C
20
0
75 C
1.0
2
8
0
4
6
10
0.2
0.4
0.6
0.8
1.0
1.2
VG S , G ate- S ource Voltage (V)
V
S D, B ody Diode F orward V oltage (V )
Figure 7. On-R esistance vs.
G ate-S ource Voltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
5