S T M9930A
S amHop Microelectronics C orp.
Dec.20, 2005
2N and 2P Channel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
(N-C hannel)
V
DS S
30V
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-30V
I
D
6A
R
DS (ON) ( m
W
)
Max
I
D
-5.3A
R
DS (ON) ( m
W
)
Max
35 @ V
G S
= 10V
54 @ V
G S
= 4.5V
P1S
53 @ V
G S
= -10V
75 @ V
G S
= -4.5V
P2S
P2G
P2G
N2D/P2D
P1S/P2S
P1G
N2G
N1S/N2S
N1D/P1D
N1G
P1G
P1N1D
P2N2D
S O-8
N1G
N1S
N2S
N2G
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
a
S ymbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
N-C hannel P-C hannel
30
20
6
4
20
1.7
2
1.44
-55 to 150
-30
20
-5.3
-3.5
-20
-1.7
Unit
V
V
A
A
A
A
W
C
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Ta= 25 C
Ta=70 C
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
1
62.5
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
