S TM9930A
N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
30
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
D
= 250uA
1.5
29
42
3
1
m ohm
m ohm
35
54
=
=
G S 10V, I
G S =4.5V, I
DS = 5V, VG S = 4.5V
D
5A
Drain-S ource On-S tate R esistance
R
DS (ON)
D
= 3A
20
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
8
Forward Transconductance
=
=
DS 10V, I 5A
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
550
P
P
P
F
F
F
C
IS S
V
DS =25V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
130
60
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
ohm
2.3
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
7
8
V
DD = 15V
= 1 A
I
D
tr
R ise Time
V
R
G S = 10V
G E N = 6 ohm
t
D(OFF)
Turn-Off Delay Time
Fall Time
15
6
tf
ns
Total G ate C harge
V
V
DS =15V, I
D
D
=5A,VG S =10V
=5A,VG S =4.5V
nC
nC
Q
g
13
6.6
1.4
3.8
DS =15V, I
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =15V, I
G S =10V
D
= 5 A
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
