S TM9930A
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
C
Typ Max
Parameter
Condition
Min
Unit
V
Symbol
b
DRAIN-SOURCE DIODE CHARACTERISTICS
V
V
GS = 0V, Is =1.7A
GS = 0V, Is =-1.7A
N-Ch
P-Ch
0.82
-0.8
1.2
Diode Forward Voltage
V
SD
-1.2
Notes
a.Surface Mounted on FR4 Board, t＜ 10sec.
＜
＜
b.Pulse Test:Pulse Width 300μ s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
20
16
12
8
20
VG S =10V
VG S =4V
VG S =4.5V
15
10
125 C
5
0
VG S =3V
4
25 C
VG S =2.5V
-55 C
0
0
0.8
1.6
2.4
4.8
3.2
4.0
0.5
1
1.5
2
3
0
2.5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
60
1.5
50
40
1.4
1.3
1.2
1.1
1.0
0
VG S =4.5V
VG S =10V
V
G S =10
V
V
ID
=5A
30
20
G S =4.5V
I
D
=3A
10
0
0
8
12
16
20
4
150
0
25
125
50
100
75
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
