S TM9930A
P-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unles s otherwis e noted)
C
Typ Max
P arameter
C ondition
Min
-30
Unit
S ymbol
5
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
-1.5
-3
53
75
V
G S (th)
V
G ate Threshold Voltage
V
V
V
V
V
DS =VG S , I
D
= -250uA
-1
m ohm
m ohm
=
=
G S -10V, I
D
-5A
-3A
44
62
Drain-S ource On-S tate R esistance
R
DS (ON)
G S =-4.5V, I
D
=
-20
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
9
Forward Transconductance
=
=
-10V, I -5A
DS
D
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
650
P
P
P
F
F
F
C
IS S
V
DS =-25V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
170
100
2.2
f =1.0MH
Z
R everse Transfer C apacitance
G ate resistance
R g
V
G S =0V, VDS = 0V, f=1.0MH
Z
ohm
c
S WITC HING C HAR AC TE R IS TIC S
Turn-On Delay Time
t
D(ON)
ns
ns
ns
9
V
DD = -15V
= -1A
G S = -10V
G E N = 6 ohm
I
D
tr
R ise Time
16
51
36
13
V
R
tD(OFF)
Turn-Off Delay Time
Fall Time
tf
ns
Total G ate C harge
V
V
DS =-15V, I
DS =-15V, I
D
=-5A,VGS =-10V
=-5A,VGS =-4.5V
nC
nC
Q
g
D
6.6
1.2
4.3
nC
nC
Q
Q
gs
G ate-S ource C harge
G ate-Drain C harge
V
V
DS =-15V, I
G S =-10V
D
= -5 A
gd
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
