STM8360T
Ver 1.0
84
70
20.0
Is, Source-drain current(A)
I
D
=6.6A
10.0
R
DS(on)
(m
Ω
)
56
42
28
75 C
14
0
25 C
125 C
5.0
125 C
75 C
25 C
0
2
4
6
8
10
1.0
0
0.4
0.8
1.2
1.6
2.0
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
1000
C, Capacitance(pF)
8
6
4
2
0
0
C is s
800
600
400
C os s
200
C rs s
0
0
5
10
15
20
25
30
V
DS
=20V
I
D
=6.6A
2
4
6
8
10
12
14 16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
300
100
100
im
it
10
0u
I
D
, Drain Current(A)
10
Switching Time(ns)
TD(off)
Tf
Tr
TD(on)
R
D
O
S
(
L
N)
10
us
1m
10
ms
s
s
10
1
DC
V DS =20V ,ID=1A
0.1
1
1
V G S =10V
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
40
6
10
60 100
0.1
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,21,2008
5
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
