STM8360T
Ver 1.0
P-Channel
25
V
G S
=-4V
-55 C
20
25 C
-I
D
, Drain Current(A)
V
G S
=-8V
-I
D
, Drain Current(A)
20
V
G S
=-4.5V
16
15
V
G S
=-10V
12
V
G S
=-3V
10
8
T j=125 C
4
0
5
0
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
2.4
3.2
4.0
4.8
-V
DS
, Drain-to-Source Voltage(V)
-V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
120
100
Figure 2. Transfer Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
G S
=-10V
I
D
=-5.5A
R
DS(on)
(m
Ω
)
80
60
40
V
G S
=-10V
20
0
V
G S
=-4.5V
R
DS(on)
, On-Resistance
Normalized
V
G S
=-4.5V
I
D
=-4.4A
1
5
10
15
20
25
0
25
50
75
100
125
150
T j (
°C )
-I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.15
I
D
=-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
V
DS
=V
G S
I
D
=-250uA
100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
7
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,21,2008
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
