Green
Product
STM8360T
Ver 1.0
S a mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRODUCT SUMMARY (N-Channel)
V
DSS
40V
PRODUCT SUMMARY (P-Channel)
V
DSS
-40V
I
D
6.6A
R
DS(ON)
(m
Ω
) Max
29
@
VGS=10V
I
D
-5.5A
R
DS(ON)
(m
Ω
) Max
42
@
VGS=-10V
65
@
VGS=-4.5V
45
@
VGS=4.5V
D
2
D
2
5
6
7
8
4
3
2
1
G
2
S
2
G
1
S
1
S O-8
1
D
1
D
1
ABSOLUTE MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
T
C
=25°C
T
C
=70°C
N-Channel P-Channel
-40
40
±20
±20
-5.5
6.6
5.3
33
16
-4.4
-31
19
2
1.28
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Sigle Pulse Avalanche Energy
Maximum Power Dissipation
a
T
C
=25°C
T
C
=70°C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
62.5
°C/W
Details are subject to change without notice.
Nov,21,2008
1
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
