STM8360T
Ver 1.0
20.0
120
100
-Is, Source-drain current(A)
I
D
=-5.5A
25 C
10.0
R
DS(on)
(m
Ω
)
80
60
40
25 C
20
0
125 C
75 C
5.0
125 C
1.0
0.4
0.6
75 C
0
2
4
6
8
10
0.8
1.0
1.2
1.4
-V
GS
, Gate-to-Source Voltage(V)
-V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
1000
Ciss
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V
GS
, Gate to Source Voltage(V)
C, Capacitance(pF)
8
6
4
2
0
0
V
DS
=-20V
I
D
=-5.5A
800
600
400
Coss
200
Crss
0
0
5
10
15
20
25
30
3
6
9
12
15
18
21 24
-V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
100
it
10
10
-I
D
, Drain Current(A)
Switching Time(ns)
100
TD(off )
Tf
Tr
TD(on)
10
R
DS
(O
L
N)
im
10
us
0u
s
1m
ms
s
1
DC
10
1
1
VDS=-20V,ID=-1A
VGS=-10V
3
10
100
0.1
V
GS
=-10V
Single Pulse
T
A
=25 C
1
10
40
0.1
Rg, Gate Resistance(
Ω
)
-V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Nov,21,2008
8
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
