STM8360T
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS
(
T
C
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
GS
=0V , I
D
=-250uA
V
DS
=-32V , V
GS
=0V
-40
-1
±100
V
uA
nA
V
GS
= ±20V , V
DS
=0V
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V , I
D
=-5.5A
V
GS
=-4.5V , I
D
=-4.4A
V
DS
=-5V , I
D
=-5.5A
-1.0
-1.7
33
48
12
-3
42
65
V
m ohm
m ohm
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
Turn-Off Delay Time
tf
Fall Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=-20V,V
GS
=0V
f=1.0MHz
980
135
90
12
17
82
35
20.7
11
1.5
6.2
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
=-20V
I
D
=-1A
V
GS
=-10V
R
GEN
=3 ohm
V
DS
=-20V,I
D
=-5.5A,V
GS
=-10V
V
DS
=-20V,I
D
=-5.5A,V
GS
=-4.5V
V
DS
=-20V,I
D
=-5.5A,
V
GS
=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
I
S
V
SD
Diode Forward Voltage
b
V
GS
=0V,I
S
=-1.7A
-0.76
-1.7
-1.2
A
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,V
DD
= 20V,V
GS
=10V.(See Figure13)
Nov,21,2008
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
